Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia-Yun Chen, Yu Rui Liu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

Original languageEnglish
Pages (from-to)26711-26714
Number of pages4
JournalPhysical Chemistry Chemical Physics
Volume16
Issue number48
DOIs
Publication statusPublished - 2014 Nov 19

Fingerprint

Silicon
Nanowires
Etching
nanowires
Metals
etching
Kinetics
kinetics
silicon
metals
Electron beam lithography
dissolving
Dissolution
lithography
spacing
electron beams

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

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abstract = "Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.",
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Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching. / Chen, Chia-Yun; Liu, Yu Rui.

In: Physical Chemistry Chemical Physics, Vol. 16, No. 48, 19.11.2014, p. 26711-26714.

Research output: Contribution to journalArticle

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