Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia Yun Chen; Yu Rui Liu

doi:10.1039/c4cp04237a

Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Chia Yun Chen, Yu Rui Liu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

Original language	English
Pages (from-to)	26711-26714
Number of pages	4
Journal	Physical Chemistry Chemical Physics
Volume	16
Issue number	48
DOIs	https://doi.org/10.1039/c4cp04237a
Publication status	Published - 2014 Nov 19

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1039/c4cp04237a

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title = "Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching",

abstract = "Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.",

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year = "2014",

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doi = "10.1039/c4cp04237a",

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N2 - Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

AB - Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.

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Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

Abstract

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