Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry