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Extended defect states in Ge quantum dots grown by RTCVD
C. J. Park
, K. H. Cho
, Y. H. Kwon
, T. W. Kang
, Hoon Young Cho
, K. L. Wang
College of Electrical Engineering and Computer Science
Research output
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Contribution to conference
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Paper
›
peer-review
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Engineering
Quantum Dot
100%
Extended Defect
100%
Band Offset
100%
Activation Energy
33%
Valence Band
33%
State of Charge
33%
Charge Carrier
33%
Interface State
33%
Ground State
33%
Apparent Activation Energy
33%
Deep Level
33%
Localized State
33%
Confined State
33%
Material Science
Quantum Dot
100%
Band Offset
100%
Activation Energy
66%
Charge Carrier
33%
Deep-Level Transient Spectroscopy
33%
State-of-Charge
33%
Physics
Quantum Dot
100%
Activation Energy
100%
Ground State
50%
Keyphrases
RTCVD
100%
Capture Kinetics
33%