Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

Y. C. Chen; J. P. Chou; K. C. Chen; Jen-Fin Lin; W. C.Y. Ma; K. H. Kao; M. H. Chiang; Yeong-Her Wang

doi:10.1109/TED.2024.3418934

Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

Y. C. Chen, J. P. Chou, K. C. Chen, Jen-Fin Lin, W. C.Y. Ma, K. H. Kao, M. H. Chiang, Yeong-Her Wang

Research output: Contribution to journal › Article › peer-review

Abstract

Thin-film transistors with ultrathin channels are fabricated and characterized at low temperatures down to 100 K in this study. Relying on a diffusive charge model, interfacial localized-state density and apparent carrier mobility are extracted from the measured data. The extraction is carried out by a numerical procedure based on particle swarm optimization (PSO). All the extracted parameters vary clearly with lowering temperatures (300sim 100 K), which are explained by phonon suppression, thermally-strained chemical bonds and carrier transport with effective mobility involving hopping mechanisms. This work demonstrates parameter extraction by PSO for the first time and highlights the challenges of non-crystalline transistors working at low temperatures.

Original language	English
Pages (from-to)	4717-4722
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	8
DOIs	https://doi.org/10.1109/TED.2024.3418934
Publication status	Published - 2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2024.3418934

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title = "Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization",

abstract = "Thin-film transistors with ultrathin channels are fabricated and characterized at low temperatures down to 100 K in this study. Relying on a diffusive charge model, interfacial localized-state density and apparent carrier mobility are extracted from the measured data. The extraction is carried out by a numerical procedure based on particle swarm optimization (PSO). All the extracted parameters vary clearly with lowering temperatures (300sim 100 K), which are explained by phonon suppression, thermally-strained chemical bonds and carrier transport with effective mobility involving hopping mechanisms. This work demonstrates parameter extraction by PSO for the first time and highlights the challenges of non-crystalline transistors working at low temperatures.",

author = "Chen, {Y. C.} and Chou, {J. P.} and Chen, {K. C.} and Jen-Fin Lin and Ma, {W. C.Y.} and Kao, {K. H.} and Chiang, {M. H.} and Yeong-Her Wang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

doi = "10.1109/TED.2024.3418934",

language = "English",

volume = "71",

pages = "4717--4722",

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TY - JOUR

T1 - Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

AU - Chen, Y. C.

AU - Chou, J. P.

AU - Chen, K. C.

AU - Lin, Jen-Fin

AU - Ma, W. C.Y.

AU - Kao, K. H.

AU - Chiang, M. H.

AU - Wang, Yeong-Her

PY - 2024

Y1 - 2024

N2 - Thin-film transistors with ultrathin channels are fabricated and characterized at low temperatures down to 100 K in this study. Relying on a diffusive charge model, interfacial localized-state density and apparent carrier mobility are extracted from the measured data. The extraction is carried out by a numerical procedure based on particle swarm optimization (PSO). All the extracted parameters vary clearly with lowering temperatures (300sim 100 K), which are explained by phonon suppression, thermally-strained chemical bonds and carrier transport with effective mobility involving hopping mechanisms. This work demonstrates parameter extraction by PSO for the first time and highlights the challenges of non-crystalline transistors working at low temperatures.

AB - Thin-film transistors with ultrathin channels are fabricated and characterized at low temperatures down to 100 K in this study. Relying on a diffusive charge model, interfacial localized-state density and apparent carrier mobility are extracted from the measured data. The extraction is carried out by a numerical procedure based on particle swarm optimization (PSO). All the extracted parameters vary clearly with lowering temperatures (300sim 100 K), which are explained by phonon suppression, thermally-strained chemical bonds and carrier transport with effective mobility involving hopping mechanisms. This work demonstrates parameter extraction by PSO for the first time and highlights the challenges of non-crystalline transistors working at low temperatures.

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JF - IEEE Transactions on Electron Devices

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Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

Abstract

All Science Journal Classification (ASJC) codes

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