Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

H. Y. Chen, Y. R. Huang, H. Y. Shih, M. J. Chen, J. K. Sheu, C. K. Sun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.

Original languageEnglish
Article number213101
JournalApplied Physics Letters
Volume111
Issue number21
DOIs
Publication statusPublished - 2017 Nov 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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