Extraction and Analysis of Interface States in 50-nm nand Flash Devices

Chin Rung Yan, Jone F. Chen, Ya Jui Lee, Yu Jie Liao, Chung Yi Lin, Chih Yuan Chen, Yin Chia Lin, Huei Haurng Chen

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A method to extract the interface states (N{\rm it}) located in the center area (center N\rm it) and the N\rm it located in the corner region (corner N\rm it) of nand Flash devices is presented in this paper. This N\rm it extraction method is based on a careful combination of charge-pumping current data, technology computer-aided-design simulation results, and the 'control gate (CG)-modulated corner effect,' where 'CG-modulated corner effect' refers to the fact that the electron density in the corner region of the transistor is greatly affected by the bias applied to CG. Using this N\rm it extraction method, the amounts of center N \rm it and corner N\rm it of a given nand Flash device can be analyzed. In addition, among devices with various widths of active area, the narrower width device showing worse corner N\rm it can be demonstrated. Furthermore, the generation of center N\rm it and corner N\rm it for a device under program/erase cycle stress is explored. Our N\rm it extraction method will be useful to analyze not only the characteristics of fresh nand Flash devices but also the reliability of aged nand Flash devices.

Original languageEnglish
Article number6461087
Pages (from-to)992-997
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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