Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs

M. A. Karim, Y. S. Chauhan, S. Venugopalan, A. B. Sachid, D. D. Lu, B. Y. Nguyen, O. Faynot, A. M. Niknejad, C. Hu

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a large amount of temperature rise due to self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.

Original languageEnglish
Article number6256692
Pages (from-to)1306-1308
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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