Extreme UV diffraction grating fabricated by nanoimprint lithography

Chun Hung Lin; Yi Ming Lin; Chia Ching Liang; Yin Yu Lee; Hok Sum Fung; Bor Yuan Shew; Szu Hung Chen

doi:10.1016/j.mee.2012.07.037

Extreme UV diffraction grating fabricated by nanoimprint lithography

Chun Hung Lin
, Yi Ming Lin
, Chia Ching Liang
, Yin Yu Lee
, Hok Sum Fung
, Bor Yuan Shew
, Szu Hung Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this study, extreme ultraviolet (EUV) diffraction gratings were fabricated by nanoimprint lithography owing to its advantages of being low cost and high throughput. The imprinted SU-8 grating can function as the EUV diffraction grating directly without the need of the additional lift-off process. The patterning steps of grating pattern and stop layer were separated to enhance 0th order blocking capability of the stop layer. The exposure results of the one-dimensional 75 and 50 nm half-pitch PMMA line/space patterns from the fabricated gratings were demonstrated.

Original language	English
Pages (from-to)	194-197
Number of pages	4
Journal	Microelectronic Engineering
Volume	98
DOIs	https://doi.org/10.1016/j.mee.2012.07.037
Publication status	Published - 2012 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2012.07.037

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title = "Extreme UV diffraction grating fabricated by nanoimprint lithography",

abstract = "In this study, extreme ultraviolet (EUV) diffraction gratings were fabricated by nanoimprint lithography owing to its advantages of being low cost and high throughput. The imprinted SU-8 grating can function as the EUV diffraction grating directly without the need of the additional lift-off process. The patterning steps of grating pattern and stop layer were separated to enhance 0th order blocking capability of the stop layer. The exposure results of the one-dimensional 75 and 50 nm half-pitch PMMA line/space patterns from the fabricated gratings were demonstrated.",

author = "Lin, \{Chun Hung\} and Lin, \{Yi Ming\} and Liang, \{Chia Ching\} and Lee, \{Yin Yu\} and Fung, \{Hok Sum\} and Shew, \{Bor Yuan\} and Chen, \{Szu Hung\}",

note = "Funding Information: This study was supported by the National Science Council of Taiwan , grants NSC 99-2120-M-009-004- , NSC 99-2221-E-006-249- and NSC 100-2120-M-009-010- .",

year = "2012",

month = oct,

doi = "10.1016/j.mee.2012.07.037",

language = "English",

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pages = "194--197",

journal = "Microelectronic Engineering",

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T1 - Extreme UV diffraction grating fabricated by nanoimprint lithography

AU - Lin, Chun Hung

AU - Lin, Yi Ming

AU - Liang, Chia Ching

AU - Lee, Yin Yu

AU - Fung, Hok Sum

AU - Shew, Bor Yuan

AU - Chen, Szu Hung

N1 - Funding Information: This study was supported by the National Science Council of Taiwan , grants NSC 99-2120-M-009-004- , NSC 99-2221-E-006-249- and NSC 100-2120-M-009-010- .

PY - 2012/10

Y1 - 2012/10

N2 - In this study, extreme ultraviolet (EUV) diffraction gratings were fabricated by nanoimprint lithography owing to its advantages of being low cost and high throughput. The imprinted SU-8 grating can function as the EUV diffraction grating directly without the need of the additional lift-off process. The patterning steps of grating pattern and stop layer were separated to enhance 0th order blocking capability of the stop layer. The exposure results of the one-dimensional 75 and 50 nm half-pitch PMMA line/space patterns from the fabricated gratings were demonstrated.

AB - In this study, extreme ultraviolet (EUV) diffraction gratings were fabricated by nanoimprint lithography owing to its advantages of being low cost and high throughput. The imprinted SU-8 grating can function as the EUV diffraction grating directly without the need of the additional lift-off process. The patterning steps of grating pattern and stop layer were separated to enhance 0th order blocking capability of the stop layer. The exposure results of the one-dimensional 75 and 50 nm half-pitch PMMA line/space patterns from the fabricated gratings were demonstrated.

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DO - 10.1016/j.mee.2012.07.037

M3 - Article

AN - SCOPUS:84865583515

SN - 0167-9317

VL - 98

SP - 194

EP - 197

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Extreme UV diffraction grating fabricated by nanoimprint lithography

Abstract

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