Abstract
This paper proposes anodic aluminum oxide (AAO) on a 20 cm × 20 cm tin-doped indium oxide (ITO)/glass substrate by using an anodization process with a specially designed carrier. The proposed AAO can be used at a high applied bias (>110 V) to improve the uniformity of current density. The enhancement of light transmittance is observed by modulating the porous diameter. Therefore, the increased transmittance of AAO/ITO/glass with increased time of pore-widening treatment is attributed to the decreased refractive index of AAO film. By using pore-widening and post-annealing treatments, the morphologies and optical transmission spectra of AAO/ITO/glass were also examined.
| Original language | English |
|---|---|
| Pages (from-to) | 47-57 |
| Number of pages | 11 |
| Journal | Integrated Ferroelectrics |
| Volume | 143 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | International Conference on Information, Communication and Engineering 2012, ICICE 2012 - Fuzhou, China Duration: 2012 Dec 15 → 2012 Dec 20 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry