This letter demonstrates and investigates AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H2O2 oxidation technique is adopted to grow an insulator layer. The material qualitative and semiquantitative analyses of the H2O2-grown aluminum oxide are studied by energy dispersive X-ray spectroscopy The performances of the present MIS-UV-PD with different H2O2 treatment time are also investigated. The MIS-PD with 5-min H2O2 treatment time has the optimum performances. The dark current is suppressed from 4.23 nA to 5.15 pA at-10 V. The responsivity and the UV to visible rejection ratio are enhanced to 1.03× 10-2 A/W and 3.38 × 105. Moreover, the noise equivalent power and detectivity are determined to be 4.8 × 10-11 W and 4.52× 1010 cmHz0.5 W-1. This cost-effective oxidation technique provides a simple approach to fabricate AlGaN/GaN MIS-UV-PD and its performances are also improved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering