Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET

Amey M. Walke; Anne Vandooren; Rita Rooyackers; Daniele Leonelli; Andriy Hikavyy; Roger Loo; Anne S. Verhulst; Kuo Hsing Kao; Cedric Huyghebaert; Guido Groeseneken; Valipe Ramgopal Rao; Krishna K. Bhuwalka; Marc M. Heyns; Nadine Collaert; Aaron Voon Yew Thean

doi:10.1109/TED.2014.2299337

Fabrication and analysis of a Si/Si_0.55Ge_0.45 heterojunction line tunnel FET

Amey M. Walke, Anne Vandooren, Rita Rooyackers, Daniele Leonelli, Andriy Hikavyy, Roger Loo, Anne S. Verhulst, Kuo Hsing Kao, Cedric Huyghebaert, Guido Groeseneken, Valipe Ramgopal Rao, Krishna K. Bhuwalka, Marc M. Heyns, Nadine Collaert, Aaron Voon Yew Thean

Master Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

134 Citations (Scopus)

Abstract

This paper presents a new integration scheme to fabricate a Si/Si _0.55 Ge_0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-μm gate length device shows on current in excess of 20 μA/μm at V_GS=V_DS=1.2~V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by ∼0.35~V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.

Original language	English
Article number	6727530
Pages (from-to)	707-715
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	3
DOIs	https://doi.org/10.1109/TED.2014.2299337
Publication status	Published - 2014 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2299337

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Walke, A. M., Vandooren, A., Rooyackers, R., Leonelli, D., Hikavyy, A., Loo, R., Verhulst, A. S., Kao, K. H., Huyghebaert, C., Groeseneken, G., Rao, V. R., Bhuwalka, K. K., Heyns, M. M., Collaert, N., & Thean, A. V. Y. (2014). Fabrication and analysis of a Si/Si_0.55Ge_0.45 heterojunction line tunnel FET. IEEE Transactions on Electron Devices, 61(3), 707-715. Article 6727530. https://doi.org/10.1109/TED.2014.2299337

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title = "Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET",

abstract = "This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-μm gate length device shows on current in excess of 20 μA/μm at VGS=VDS=1.2~V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by ∼0.35~V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.",

author = "Walke, {Amey M.} and Anne Vandooren and Rita Rooyackers and Daniele Leonelli and Andriy Hikavyy and Roger Loo and Verhulst, {Anne S.} and Kao, {Kuo Hsing} and Cedric Huyghebaert and Guido Groeseneken and Rao, {Valipe Ramgopal} and Bhuwalka, {Krishna K.} and Heyns, {Marc M.} and Nadine Collaert and Thean, {Aaron Voon Yew}",

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Walke, AM, Vandooren, A, Rooyackers, R, Leonelli, D, Hikavyy, A, Loo, R, Verhulst, AS, Kao, KH, Huyghebaert, C, Groeseneken, G, Rao, VR, Bhuwalka, KK, Heyns, MM, Collaert, N & Thean, AVY 2014, 'Fabrication and analysis of a Si/Si_0.55Ge_0.45 heterojunction line tunnel FET', IEEE Transactions on Electron Devices, vol. 61, no. 3, 6727530, pp. 707-715. https://doi.org/10.1109/TED.2014.2299337

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T1 - Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET

AU - Walke, Amey M.

AU - Vandooren, Anne

AU - Rooyackers, Rita

AU - Leonelli, Daniele

AU - Hikavyy, Andriy

AU - Loo, Roger

AU - Verhulst, Anne S.

AU - Kao, Kuo Hsing

AU - Huyghebaert, Cedric

AU - Groeseneken, Guido

AU - Rao, Valipe Ramgopal

AU - Bhuwalka, Krishna K.

AU - Heyns, Marc M.

AU - Collaert, Nadine

AU - Thean, Aaron Voon Yew

PY - 2014/3

Y1 - 2014/3

N2 - This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-μm gate length device shows on current in excess of 20 μA/μm at VGS=VDS=1.2~V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by ∼0.35~V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.

AB - This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-μm gate length device shows on current in excess of 20 μA/μm at VGS=VDS=1.2~V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by ∼0.35~V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.

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Fabrication and analysis of a Si/Si_0.55Ge_0.45 heterojunction line tunnel FET

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