Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

Yi Shiang Chen, Ching Yi Kao, Kuan Wei Lee, Yeong Her Wang

Research output: Contribution to journalArticle

Abstract

This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.

Original languageEnglish
Article number109007
JournalVacuum
Volume171
DOIs
Publication statusPublished - 2020 Jan

Fingerprint

liquid phases
High electron mobility transistors
high electron mobility transistors
insulators
Fabrication
Oxidation
oxidation
fabrication
Liquids
Electric breakdown
electrical faults
Leakage currents
Oxide films
oxide films
leakage
Current density
current density
low frequencies
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

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title = "Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation",
abstract = "This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.",
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Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation. / Chen, Yi Shiang; Kao, Ching Yi; Lee, Kuan Wei; Wang, Yeong Her.

In: Vacuum, Vol. 171, 109007, 01.2020.

Research output: Contribution to journalArticle

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