Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

Yi Shiang Chen; Ching Yi Kao; Kuan Wei Lee; Yeong Her Wang

doi:10.1016/j.vacuum.2019.109007

Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

Yi Shiang Chen, Ching Yi Kao, Kuan Wei Lee, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.

Original language	English
Article number	109007
Journal	Vacuum
Volume	171
DOIs	https://doi.org/10.1016/j.vacuum.2019.109007
Publication status	Published - 2020 Jan

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2019.109007

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@article{1a5e35b8806b489582682c72b27ccd1a,

title = "Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation",

abstract = "This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.",

author = "Chen, {Yi Shiang} and Kao, {Ching Yi} and Lee, {Kuan Wei} and Wang, {Yeong Her}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST) of Taiwan under contract nos. NSC 101-2221-E-214-039 and NSC 102-2221-E-214-055, and MOST 106-2221-E-006-219-MY3. This manuscript was edited by Wallace Academic Editing. Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST) of Taiwan under contract nos. NSC 101-2221-E-214-039 and NSC 102-2221-E-214-055 , and MOST 106-2221-E-006-219-MY3 . This manuscript was edited by Wallace Academic Editing. Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2020",

month = jan,

doi = "10.1016/j.vacuum.2019.109007",

language = "English",

volume = "171",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

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T1 - Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

AU - Chen, Yi Shiang

AU - Kao, Ching Yi

AU - Lee, Kuan Wei

AU - Wang, Yeong Her

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST) of Taiwan under contract nos. NSC 101-2221-E-214-039 and NSC 102-2221-E-214-055, and MOST 106-2221-E-006-219-MY3. This manuscript was edited by Wallace Academic Editing. Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST) of Taiwan under contract nos. NSC 101-2221-E-214-039 and NSC 102-2221-E-214-055 , and MOST 106-2221-E-006-219-MY3 . This manuscript was edited by Wallace Academic Editing. Publisher Copyright: © 2019 Elsevier Ltd

PY - 2020/1

Y1 - 2020/1

N2 - This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.

AB - This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) structure obtained using liquid-phase chemical-enhanced oxidation (LPCEO). Two oxidation times were investigated, and the PHEMT with GOI structure prepared through 15 min of LPCEO was discovered to have improved subthreshold characteristics, suppressed gate leakage current density, larger breakdown voltage, and less low-frequency noise owing to the isolated oxide film. Therefore, the proposed PHEMT with GOI structure prepared through LPCEO is promising for group III-V compound device applications.

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JO - Vacuum

JF - Vacuum

M1 - 109007

ER -

Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

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