Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa

Ying Yu Lai, Yu Hsun Chou, Yu Sheng Wu, Yu Pin Lan, Tien Chang Lu, Shing Chung Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-μm-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement.

Original languageEnglish
Article number062101
JournalApplied Physics Express
Volume7
Issue number6
DOIs
Publication statusPublished - 2014 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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