Fabrication and characteristics of silicon micro-tip arrays

Kuan Jen Chen, Te Hua Fang, Liang Wen Ji, Shoou Jinn Chang, Sheng Joue Young

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.

Original languageEnglish
Pages (from-to)5601-5611
Number of pages11
JournalInternational Journal of Modern Physics B
Volume24
Issue number28
DOIs
Publication statusPublished - 2010 Nov 10

Fingerprint

field emission
fabrication
silicon
critical loading
packing density
plasma etching
buckling
nanoindentation
cones
emitters
lithography
etching
radii
augmentation
electric potential

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

Chen, Kuan Jen ; Fang, Te Hua ; Ji, Liang Wen ; Chang, Shoou Jinn ; Young, Sheng Joue. / Fabrication and characteristics of silicon micro-tip arrays. In: International Journal of Modern Physics B. 2010 ; Vol. 24, No. 28. pp. 5601-5611.
@article{0b14f9fbab50424884866f7dda8350ea,
title = "Fabrication and characteristics of silicon micro-tip arrays",
abstract = "Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.",
author = "Chen, {Kuan Jen} and Fang, {Te Hua} and Ji, {Liang Wen} and Chang, {Shoou Jinn} and Young, {Sheng Joue}",
year = "2010",
month = "11",
day = "10",
doi = "10.1142/S0217979210055159",
language = "English",
volume = "24",
pages = "5601--5611",
journal = "International Journal of Modern Physics B",
issn = "0217-9792",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "28",

}

Fabrication and characteristics of silicon micro-tip arrays. / Chen, Kuan Jen; Fang, Te Hua; Ji, Liang Wen; Chang, Shoou Jinn; Young, Sheng Joue.

In: International Journal of Modern Physics B, Vol. 24, No. 28, 10.11.2010, p. 5601-5611.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characteristics of silicon micro-tip arrays

AU - Chen, Kuan Jen

AU - Fang, Te Hua

AU - Ji, Liang Wen

AU - Chang, Shoou Jinn

AU - Young, Sheng Joue

PY - 2010/11/10

Y1 - 2010/11/10

N2 - Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.

AB - Si field emission arrays (FEAs) were produced using simple optical lithography and plasma dry etching. By optimizing plasma etching conditions, we achieved uniform ultra-sharp emitters with 50 nm radius, 3.6 μm height, 60° cone angle, and 1.38×106 tips/cm2 packing density. For the fabricated FEAs, it was found that turn-on voltage was 850 V and the field emission current was 24 μA at 1100 V. It was also found that field enhancement factor γ of the fabricated Si FEAs was approximately 58. Nanomechanical characterization of Si necked tips array was performed by nanoindentation technology. The critical buckling load and critical stress of the Si necked tips array were 570 μN and 1.192 GPa, respectively.

UR - http://www.scopus.com/inward/record.url?scp=79951552855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951552855&partnerID=8YFLogxK

U2 - 10.1142/S0217979210055159

DO - 10.1142/S0217979210055159

M3 - Article

AN - SCOPUS:79951552855

VL - 24

SP - 5601

EP - 5611

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

SN - 0217-9792

IS - 28

ER -