Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112̄0)/Mo(100) on MgO(100) and of uniaxial Co(11̄00)/Mo(211) on MgO(11̄00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112̄0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11̄00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering