Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes

H. T. Hsueh; S. J. Chang; W. Y. Weng; C. L. Hsu; T. J. Hsueh; F. Y. Hung; S. L. Wu; B. T. Dai

doi:10.1109/TNANO.2011.2159620

Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes

H. T. Hsueh, S. J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L. Wu, B. T. Dai

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52 Citations (Scopus)

Abstract

The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu ₂O/ZnO nanowire photodiode, Cu ₄O ₃/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O ₂ flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 ^-11, 3.8 × 10 ^-10, and 7.2 × 10 ^-8 W while normalized detectivities were 6.35 × 10 ₉, 1.02 × 10 ₉, and 5.37 × 10 ₆ cmHz ^0.5 W ^-1 for the fabricated Cu ₂O/ZnO nanowire photodiode, Cu ₄ O ₃/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

Original language	English
Article number	5876323
Pages (from-to)	127-133
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2011.2159620
Publication status	Published - 2012 Jan

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2011.2159620

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@article{5245f5d2b5114f7b96ff47d299b2f46d,

title = "Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes",

abstract = "The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu 2O/ZnO nanowire photodiode, Cu 4O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O 2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 -11, 3.8 × 10 -10, and 7.2 × 10 -8 W while normalized detectivities were 6.35 × 10 9, 1.02 × 10 9, and 5.37 × 10 6 cmHz 0.5 W -1 for the fabricated Cu 2O/ZnO nanowire photodiode, Cu 4 O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.",

author = "Hsueh, {H. T.} and Chang, {S. J.} and Weng, {W. Y.} and Hsu, {C. L.} and Hsueh, {T. J.} and Hung, {F. Y.} and Wu, {S. L.} and Dai, {B. T.}",

note = "Funding Information: Manuscript received June 1, 2010; revised; accepted June 7, 2011. Date of publication June 16, 2011; date of current version January 11, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, TAIWAN. This work was also supported in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract No. 98-D0204-6. The review of this paper was arranged by Associate Editor E. T. Yu.",

year = "2012",

month = jan,

doi = "10.1109/TNANO.2011.2159620",

language = "English",

volume = "11",

pages = "127--133",

journal = "IEEE Transactions on Nanotechnology",

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AU - Hsueh, H. T.

AU - Chang, S. J.

AU - Weng, W. Y.

AU - Hsu, C. L.

AU - Hsueh, T. J.

AU - Hung, F. Y.

AU - Wu, S. L.

AU - Dai, B. T.

N1 - Funding Information: Manuscript received June 1, 2010; revised; accepted June 7, 2011. Date of publication June 16, 2011; date of current version January 11, 2012. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, TAIWAN. This work was also supported in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract No. 98-D0204-6. The review of this paper was arranged by Associate Editor E. T. Yu.

PY - 2012/1

Y1 - 2012/1

N2 - The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu 2O/ZnO nanowire photodiode, Cu 4O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O 2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 -11, 3.8 × 10 -10, and 7.2 × 10 -8 W while normalized detectivities were 6.35 × 10 9, 1.02 × 10 9, and 5.37 × 10 6 cmHz 0.5 W -1 for the fabricated Cu 2O/ZnO nanowire photodiode, Cu 4 O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

AB - The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu 2O/ZnO nanowire photodiode, Cu 4O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O 2 flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10 -11, 3.8 × 10 -10, and 7.2 × 10 -8 W while normalized detectivities were 6.35 × 10 9, 1.02 × 10 9, and 5.37 × 10 6 cmHz 0.5 W -1 for the fabricated Cu 2O/ZnO nanowire photodiode, Cu 4 O 3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

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Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes

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