TY - JOUR
T1 - Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and GaO Gate Insulator Layer
AU - Lee, Hsin Ying
AU - Chang, Ting Wei
AU - Chang, Edward Yi
AU - Rorsman, Niklas
AU - Lee, Ching Ting
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - In this work, the properties of gallium oxide (Ga2O3) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga2O3 films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga2O3 films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga2O3 gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of -1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 ×, 10-15 Hz-1. It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array.
AB - In this work, the properties of gallium oxide (Ga2O3) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga2O3 films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga2O3 films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga2O3 gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of -1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 ×, 10-15 Hz-1. It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array.
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U2 - 10.1109/JEDS.2021.3069973
DO - 10.1109/JEDS.2021.3069973
M3 - Article
AN - SCOPUS:85103782825
SN - 2168-6734
VL - 9
SP - 393
EP - 399
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
M1 - 9392009
ER -