Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate

Kuan Ting Liu; Shoou Jinn Chang; Sean Wu

doi:10.1109/ICAMSE.2016.7840357

Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate

Kuan Ting Liu, Shoou Jinn Chang, Sean Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

Original language	English
Title of host publication	Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering
Subtitle of host publication	Innovation, Science and Engineering, IEEE-ICAMSE 2016
Editors	Teen-Hang Meen, Stephen D. Prior, Artde Donald Kin-Tak Lam
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	401-403
Number of pages	3
ISBN (Electronic)	9781509038695
DOIs	https://doi.org/10.1109/ICAMSE.2016.7840357
Publication status	Published - 2017 Feb 2
Event	2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016 - Tainan, Taiwan Duration: 2016 Nov 12 → 2016 Nov 13

Publication series

Name	Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016

Other

Other	2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016
Country/Territory	Taiwan
City	Tainan
Period	16-11-12 → 16-11-13

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Civil and Structural Engineering
Mechanics of Materials
Media Technology
Materials Science (miscellaneous)
Electronic, Optical and Magnetic Materials

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10.1109/ICAMSE.2016.7840357

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Liu, K. T., Chang, S. J., & Wu, S. (2017). Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. In T.-H. Meen, S. D. Prior, & A. D. K.-T. Lam (Eds.), Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016 (pp. 401-403). Article 7840357 (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAMSE.2016.7840357

Liu, Kuan Ting ; Chang, Shoou Jinn ; Wu, Sean. / Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. editor / Teen-Hang Meen ; Stephen D. Prior ; Artde Donald Kin-Tak Lam. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 401-403 (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

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title = "Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate",

abstract = "GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.",

author = "Liu, {Kuan Ting} and Chang, {Shoou Jinn} and Sean Wu",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016 ; Conference date: 12-11-2016 Through 13-11-2016",

year = "2017",

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doi = "10.1109/ICAMSE.2016.7840357",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "401--403",

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Liu, KT, Chang, SJ & Wu, S 2017, Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. in T-H Meen, SD Prior & ADK-T Lam (eds), Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016., 7840357, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016, Institute of Electrical and Electronics Engineers Inc., pp. 401-403, 2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016, Tainan, Taiwan, 16-11-12. https://doi.org/10.1109/ICAMSE.2016.7840357

Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. / Liu, Kuan Ting; Chang, Shoou Jinn; Wu, Sean.
Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. ed. / Teen-Hang Meen; Stephen D. Prior; Artde Donald Kin-Tak Lam. Institute of Electrical and Electronics Engineers Inc., 2017. p. 401-403 7840357 (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

AB - GaN metal-semiconductor-metal ultraviolet (UV) photodetector is grown on geometrical patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector grown on geometrical patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a better maximum responsivity, and a larger UV-to-visible rejection ratio as compare with those of the photodetector grown on conventional flat sapphire substrate. These improved properties may all be attributed to the reduction of threading dislocation density and the internal reflection and/or scattering effect on the geometrical pattern of the substrate.

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Liu KT, Chang SJ, Wu S. Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate. In Meen TH, Prior SD, Lam ADKT, editors, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 401-403. 7840357. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016). doi: 10.1109/ICAMSE.2016.7840357

Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate

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