Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

K. L. Wang; P. V. Gray

doi:10.1109/T-ED.1975.18137

Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

K. L. Wang, P. V. Gray

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.

Original language	English
Pages (from-to)	353-355
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1975.18137
Publication status	Published - 1975 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1975.18137

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title = "Fabrication and Characterization of Germanium Ion-Implanted IGF{\textquoteleft}ET's",

abstract = "Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.",

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AU - Gray, P. V.

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AB - Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.

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JO - IEEE Transactions on Electron Devices

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Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

Abstract

All Science Journal Classification (ASJC) codes

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