Fabrication and Characterization of Germanium Ion-Implanted IGF‘ET's

K. L. Wang, P. V. Gray

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.

Original languageEnglish
Pages (from-to)353-355
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume22
Issue number6
DOIs
Publication statusPublished - 1975 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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