TY - GEN
T1 - Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes
AU - Huang, Chun Yuan
AU - Chen, Ying Chih
AU - Yu, Hsin Chieh
AU - Su, Yan Kuin
AU - Wen, Ten Chin
AU - Guo, Tzung Fang
PY - 2008
Y1 - 2008
N2 - We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.
AB - We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.
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U2 - 10.1109/ICONN.2008.4639279
DO - 10.1109/ICONN.2008.4639279
M3 - Conference contribution
AN - SCOPUS:56349162611
SN - 1424415047
SN - 9781424415045
T3 - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
SP - 192
EP - 195
BT - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
T2 - 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
Y2 - 25 February 2008 through 29 February 2008
ER -