Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods

Tao Hung Hsueh, Jinn Kong Sheu, Hung Wen Huang, Ya Hsien Chang, Miao Chia Ou-Yang, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm 2. These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.

Original languageEnglish
Pages (from-to)7723-7725
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - 2005 Oct 11

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication and characterization of In<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN multiple quantum wells embedded in nanorods'. Together they form a unique fingerprint.

Cite this