Abstract
In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm 2. These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Original language | English |
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Pages (from-to) | 7723-7725 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 44 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2005 Oct 11 |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy