Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

Binh Tinh Tran; Edward Yi Chang; Hai Dang Trinh; Ching Ting Lee; Kartika Chandra Sahoo; Kung Liang Lin; Man Chi Huang; Hung Wei Yu; Tien Tung Luong; Chen Chen Chung; Chi Lang Nguyen

doi:10.1016/j.solmat.2012.03.030

Fabrication and characterization of n-In _0.4Ga _0.6N/p-Si solar cell

Binh Tinh Tran, Edward Yi Chang, Hai Dang Trinh, Ching Ting Lee, Kartika Chandra Sahoo, Kung Liang Lin, Man Chi Huang, Hung Wei Yu, Tien Tung Luong, Chen Chen Chung, Chi Lang Nguyen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Electro-optic characteristics of a fabricated n-In _0.4Ga _0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V _oc) of 1.52 V and a short-circuit current density (J _sc) of 8.68 mA/cm ² with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V _oc and In content in the In _xGa _1-xN alloys for this type of solar cell was also derived.

Original language	English
Pages (from-to)	208-211
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	102
DOIs	https://doi.org/10.1016/j.solmat.2012.03.030
Publication status	Published - 2012 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2012.03.030

Cite this

@article{5444eb5f078e490c8014b8095cee77e8,

title = "Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell",

abstract = "Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.",

author = "Tran, {Binh Tinh} and Chang, {Edward Yi} and Trinh, {Hai Dang} and Lee, {Ching Ting} and Sahoo, {Kartika Chandra} and Lin, {Kung Liang} and Huang, {Man Chi} and Yu, {Hung Wei} and Luong, {Tien Tung} and Chung, {Chen Chen} and Nguyen, {Chi Lang}",

note = "Funding Information: The authors would like to thank the Taiwan National Science Council (under research grant nos. NSC98-2923-E-009-002-MY3 and NSC99-2221-E-009-170-MY3 ) for providing the financial support. ",

year = "2012",

month = jul,

doi = "10.1016/j.solmat.2012.03.030",

language = "English",

volume = "102",

pages = "208--211",

journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

AU - Tran, Binh Tinh

AU - Chang, Edward Yi

AU - Trinh, Hai Dang

AU - Lee, Ching Ting

AU - Sahoo, Kartika Chandra

AU - Lin, Kung Liang

AU - Huang, Man Chi

AU - Yu, Hung Wei

AU - Luong, Tien Tung

AU - Chung, Chen Chen

AU - Nguyen, Chi Lang

N1 - Funding Information: The authors would like to thank the Taiwan National Science Council (under research grant nos. NSC98-2923-E-009-002-MY3 and NSC99-2221-E-009-170-MY3 ) for providing the financial support.

PY - 2012/7

Y1 - 2012/7

N2 - Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

AB - Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

UR - http://www.scopus.com/inward/record.url?scp=84861094292&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861094292&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2012.03.030

DO - 10.1016/j.solmat.2012.03.030

M3 - Article

AN - SCOPUS:84861094292

VL - 102

SP - 208

EP - 211

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

ER -