Abstract
Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.
Original language | English |
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Pages (from-to) | 208-211 |
Number of pages | 4 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 102 |
DOIs | |
Publication status | Published - 2012 Jul 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films