Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

Binh Tinh Tran; Edward Yi Chang; Hai Dang Trinh; Ching Ting Lee; Kartika Chandra Sahoo; Kung Liang Lin; Man Chi Huang; Hung Wei Yu; Tien Tung Luong; Chen Chen Chung; Chi Lang Nguyen

doi:10.1016/j.solmat.2012.03.030

Fabrication and characterization of n-In _0.4Ga _0.6N/p-Si solar cell

Binh Tinh Tran, Edward Yi Chang, Hai Dang Trinh, Ching Ting Lee, Kartika Chandra Sahoo, Kung Liang Lin, Man Chi Huang, Hung Wei Yu, Tien Tung Luong, Chen Chen Chung, Chi Lang Nguyen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Electro-optic characteristics of a fabricated n-In _0.4Ga _0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V _oc) of 1.52 V and a short-circuit current density (J _sc) of 8.68 mA/cm ² with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V _oc and In content in the In _xGa _1-xN alloys for this type of solar cell was also derived.

Original language	English
Pages (from-to)	208-211
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	102
DOIs	https://doi.org/10.1016/j.solmat.2012.03.030
Publication status	Published - 2012 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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@article{5444eb5f078e490c8014b8095cee77e8,

title = "Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell",

abstract = "Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.",

author = "Tran, {Binh Tinh} and Chang, {Edward Yi} and Trinh, {Hai Dang} and Lee, {Ching Ting} and Sahoo, {Kartika Chandra} and Lin, {Kung Liang} and Huang, {Man Chi} and Yu, {Hung Wei} and Luong, {Tien Tung} and Chung, {Chen Chen} and Nguyen, {Chi Lang}",

year = "2012",

month = jul,

day = "1",

doi = "10.1016/j.solmat.2012.03.030",

language = "English",

volume = "102",

pages = "208--211",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

}

Fabrication and characterization of n-In _0.4Ga _0.6N/p-Si solar cell. / Tran, Binh Tinh; Chang, Edward Yi; Trinh, Hai Dang; Lee, Ching Ting; Sahoo, Kartika Chandra; Lin, Kung Liang; Huang, Man Chi; Yu, Hung Wei; Luong, Tien Tung; Chung, Chen Chen; Nguyen, Chi Lang.

In: Solar Energy Materials and Solar Cells, Vol. 102, 01.07.2012, p. 208-211.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

AU - Tran, Binh Tinh

AU - Chang, Edward Yi

AU - Trinh, Hai Dang

AU - Lee, Ching Ting

AU - Sahoo, Kartika Chandra

AU - Lin, Kung Liang

AU - Huang, Man Chi

AU - Yu, Hung Wei

AU - Luong, Tien Tung

AU - Chung, Chen Chen

AU - Nguyen, Chi Lang

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

AB - Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

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