Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

Binh Tinh Tran, Edward Yi Chang, Hai Dang Trinh, Ching Ting Lee, Kartika Chandra Sahoo, Kung Liang Lin, Man Chi Huang, Hung Wei Yu, Tien Tung Luong, Chen Chen Chung, Chi Lang Nguyen

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28 Citations (Scopus)


Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalSolar Energy Materials and Solar Cells
Publication statusPublished - 2012 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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