Fabrication and characterization of nanostructured Ta-Si-N films

C. K. Chung; T. S. Chen; C. C. Peng; Bo-Hsiung Wu

doi:10.1109/NEMS.2007.352001

Fabrication and characterization of nanostructured Ta-Si-N films

C. K. Chung, T. S. Chen, C. C. Peng, Bo-Hsiung Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio i.e. FN₂ %= FN₂/( FN₂+FAr) x 100% during sputtering. Amorphous-like TaSi-N films obtained at small FN₂% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN₂% of 20- 30%. The variation of Ta-Si-N microstructure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN₂% while the nanohardness first increases to a maximum of 15.19 GPa from FN₂% of 2% to 3%, then decreases with increasing FN₂%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.

Original language	English
Title of host publication	Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages	308-311
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2007.352001
Publication status	Published - 2007 Aug 28
Event	2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand Duration: 2007 Jan 16 → 2007 Jan 19

Publication series

Name	Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Other

Other	2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Country	Thailand
City	Bangkok
Period	07-01-16 → 07-01-19

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/NEMS.2007.352001

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Chung, C. K., Chen, T. S., Peng, C. C., & Wu, B-H. (2007). Fabrication and characterization of nanostructured Ta-Si-N films. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 (pp. 308-311). [4160326] (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007). https://doi.org/10.1109/NEMS.2007.352001

Chung, C. K. ; Chen, T. S. ; Peng, C. C. ; Wu, Bo-Hsiung. / Fabrication and characterization of nanostructured Ta-Si-N films. Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. pp. 308-311 (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007).

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title = "Fabrication and characterization of nanostructured Ta-Si-N films",

abstract = "In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio i.e. FN2 %= FN2/( FN2+FAr) x 100% during sputtering. Amorphous-like TaSi-N films obtained at small FN2% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN2% of 20- 30%. The variation of Ta-Si-N microstructure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN2% while the nanohardness first increases to a maximum of 15.19 GPa from FN2% of 2% to 3%, then decreases with increasing FN2%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.",

author = "Chung, {C. K.} and Chen, {T. S.} and Peng, {C. C.} and Bo-Hsiung Wu",

year = "2007",

month = aug,

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doi = "10.1109/NEMS.2007.352001",

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series = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",

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booktitle = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",

note = "2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 ; Conference date: 16-01-2007 Through 19-01-2007",

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Chung, CK, Chen, TS, Peng, CC & Wu, B-H 2007, Fabrication and characterization of nanostructured Ta-Si-N films. in Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007., 4160326, Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, pp. 308-311, 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, Bangkok, Thailand, 07-01-16. https://doi.org/10.1109/NEMS.2007.352001

Fabrication and characterization of nanostructured Ta-Si-N films. / Chung, C. K.; Chen, T. S.; Peng, C. C.; Wu, Bo-Hsiung.

Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. p. 308-311 4160326 (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio i.e. FN2 %= FN2/( FN2+FAr) x 100% during sputtering. Amorphous-like TaSi-N films obtained at small FN2% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN2% of 20- 30%. The variation of Ta-Si-N microstructure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN2% while the nanohardness first increases to a maximum of 15.19 GPa from FN2% of 2% to 3%, then decreases with increasing FN2%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.

AB - In this paper, the morphology and properties of nanostructured Ta-Si-N thin films fabricated by reactively cosputtering have been studied. The Ta-Si-N film is a mixed composite consisting of the Ta-Si, Ta-N and Si-N compounds. The TaN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio i.e. FN2 %= FN2/( FN2+FAr) x 100% during sputtering. Amorphous-like TaSi-N films obtained at small FN2% of 2-10% had smaller roughness, lower resistivity and larger nanohardness compared to polycrystalline films at high FN2% of 20- 30%. The variation of Ta-Si-N microstructure leads to the different electrical and mechanical properties of films. The electric resistivity of Ta-Si-N increases with increasing FN2% while the nanohardness first increases to a maximum of 15.19 GPa from FN2% of 2% to 3%, then decreases with increasing FN2%. The higher hardness in amorphous-like Ta-Si-N exhibits a larger stiffness and resilience than polycrystalline one.

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Chung CK, Chen TS, Peng CC, Wu B-H. Fabrication and characterization of nanostructured Ta-Si-N films. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. p. 308-311. 4160326. (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007). https://doi.org/10.1109/NEMS.2007.352001