Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh; Y. S. Chang; F. Lai; H. W. Huang; M. C. Ou-yang; C. W. Chang; H. C. Kuo; S. C. Wang; J. K. Sheu

Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh, Y. S. Chang, F. Lai, H. W. Huang, M. C. Ou-yang, C. W. Chang, H. C. Kuo, S. C. Wang, J. K. Sheu

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

Original language	English
Pages (from-to)	607-608
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	97
Publication status	Published - 2004
Event	International Quantum Electronics Conference, IQEC - San Francisco, CA, United States Duration: 2004 May 21 → 2004 May 26

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@article{26d0530e33e14186873db1939dec5e90,

title = "Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods",

abstract = "InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.",

author = "Hsueh, {T. H.} and Chang, {Y. S.} and F. Lai and Huang, {H. W.} and Ou-yang, {M. C.} and Chang, {C. W.} and Kuo, {H. C.} and Wang, {S. C.} and Sheu, {J. K.}",

year = "2004",

language = "English",

volume = "97",

pages = "607--608",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "International Quantum Electronics Conference, IQEC ; Conference date: 21-05-2004 Through 26-05-2004",

}

TY - JOUR

T1 - Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

AU - Hsueh, T. H.

AU - Chang, Y. S.

AU - Lai, F.

AU - Huang, H. W.

AU - Ou-yang, M. C.

AU - Chang, C. W.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Sheu, J. K.

PY - 2004

Y1 - 2004

N2 - InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

AB - InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

UR - http://www.scopus.com/inward/record.url?scp=33645217837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645217837&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645217837

SN - 1094-5695

VL - 97

SP - 607

EP - 608

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - International Quantum Electronics Conference, IQEC

Y2 - 21 May 2004 through 26 May 2004

ER -

Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

Abstract

All Science Journal Classification (ASJC) codes

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