FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Y. Tzeng, T. H. Lin, J. L. Davidson, L. S. Lan

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

Original languageEnglish
Pages187-190
Number of pages4
Publication statusPublished - 1987 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Tzeng, Y., Lin, T. H., Davidson, J. L., & Lan, L. S. (1987). FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.. 187-190.