Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.
|Number of pages||4|
|Publication status||Published - 1987 Jan 1|
All Science Journal Classification (ASJC) codes