FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Y. Tzeng, T. H. Lin, J. L. Davidson, L. S. Lan

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)

Abstract

Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

Original languageEnglish
Pages187-190
Number of pages4
Publication statusPublished - 1987 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.'. Together they form a unique fingerprint.

Cite this