FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Y. Tzeng; T. H. Lin; J. L. Davidson; L. S. Lan

FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Y. Tzeng
, T. H. Lin
, J. L. Davidson
, L. S. Lan

Research output: Contribution to conference › Paper › peer-review

Abstract

Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

Original language	English
Pages	187-190
Number of pages	4
Publication status	Published - 1987 Jan 1

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{d160bc4f2e6f4d5e8ab44c60db66b67d,

title = "FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.",

abstract = "Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.",

author = "Y. Tzeng and Lin, \{T. H.\} and Davidson, \{J. L.\} and Lan, \{L. S.\}",

year = "1987",

month = jan,

day = "1",

language = "English",

pages = "187--190",

}

TY - CONF

T1 - FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

AU - Tzeng, Y.

AU - Lin, T. H.

AU - Davidson, J. L.

AU - Lan, L. S.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

AB - Schottky diodes, PN junction diodes, and an NPN bipolar junction transistor are fabricated on a type IIb natural diamond chip by means of ion implantation. Well-behaved rectifying diodes are characterized at elevated temperatures up to 500 degree C. The authors report the fabrication procedure and device characteristics of these diamond electronic devices.

UR - https://www.scopus.com/pages/publications/0023169791

UR - https://www.scopus.com/pages/publications/0023169791#tab=citedBy

M3 - Paper

AN - SCOPUS:0023169791

SP - 187

EP - 190

ER -

FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Abstract

All Science Journal Classification (ASJC) codes

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