Abstract
The determination of the carrier concentrations of well-aligned ZnO nanorods grown on p-Si substrates with ac impedance analysis is discussed. Gate-dependent electrical-transport measurements of single-nanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires. Apart from the Hall effect measurement for thin-film semi-conductor materials, the capacitance-voltage (C-V) measurement is used as an alternative method of determining the doping concentrations in semiconductors. There exists a simple ac impedance approach for determining the carrier concentrations of well-assigned ZnO nanorods on Si substrates other than gate-dependent electrical-transport measurement. However, by using the ac impedance approach, it is proved that the carrier concentrations of ZnO nanorods grown using MOCVD can be controlled.
Original language | English |
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Pages (from-to) | 2015-2019 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 19 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2007 Aug 3 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering