The determination of the carrier concentrations of well-aligned ZnO nanorods grown on p-Si substrates with ac impedance analysis is discussed. Gate-dependent electrical-transport measurements of single-nanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires. Apart from the Hall effect measurement for thin-film semi-conductor materials, the capacitance-voltage (C-V) measurement is used as an alternative method of determining the doping concentrations in semiconductors. There exists a simple ac impedance approach for determining the carrier concentrations of well-assigned ZnO nanorods on Si substrates other than gate-dependent electrical-transport measurement. However, by using the ac impedance approach, it is proved that the carrier concentrations of ZnO nanorods grown using MOCVD can be controlled.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering