Fabrication and impedance analysis of n-ZnO nanorod/p-Si heterojunctions to investigate carrier concentrations in Zn/O source-ratio-tuned ZnO nanorod arrays

Jih Jen Wu, Daniel Kwan Pang Wong

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

The determination of the carrier concentrations of well-aligned ZnO nanorods grown on p-Si substrates with ac impedance analysis is discussed. Gate-dependent electrical-transport measurements of single-nanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires. Apart from the Hall effect measurement for thin-film semi-conductor materials, the capacitance-voltage (C-V) measurement is used as an alternative method of determining the doping concentrations in semiconductors. There exists a simple ac impedance approach for determining the carrier concentrations of well-assigned ZnO nanorods on Si substrates other than gate-dependent electrical-transport measurement. However, by using the ac impedance approach, it is proved that the carrier concentrations of ZnO nanorods grown using MOCVD can be controlled.

Original languageEnglish
Pages (from-to)2015-2019
Number of pages5
JournalAdvanced Materials
Volume19
Issue number15
DOIs
Publication statusPublished - 2007 Aug 3

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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