Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

Artde Donald Kin Tak Lam; Sheng Po Chang; Chieh Yu Kuan; Shoou Jinn Chang

doi:10.18494/SAM4802

Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

Artde Donald Kin Tak Lam, Sheng Po Chang, Chieh Yu Kuan, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo-dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In₂O₃ target and 5 W for the WO₃ target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 10⁶, a responsivity of 160 A W⁻¹, and a UV-to-visible rejection ratio of 4.71 × 10⁴. Also, time-dependent switching properties have been demonstrated.

Original language	English
Pages (from-to)	1835-1848
Number of pages	14
Journal	Sensors and Materials
Volume	36
Issue number	5
DOIs	https://doi.org/10.18494/SAM4802
Publication status	Published - 2024

All Science Journal Classification (ASJC) codes

Instrumentation
General Materials Science

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title = "Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector",

abstract = "In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo-dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In2O3 target and 5 W for the WO3 target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 106, a responsivity of 160 A W−1, and a UV-to-visible rejection ratio of 4.71 × 104. Also, time-dependent switching properties have been demonstrated.",

author = "Lam, {Artde Donald Kin Tak} and Chang, {Sheng Po} and Kuan, {Chieh Yu} and Chang, {Shoou Jinn}",

year = "2024",

doi = "10.18494/SAM4802",

language = "English",

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pages = "1835--1848",

journal = "Sensors and Materials",

issn = "0914-4935",

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T1 - Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

AU - Lam, Artde Donald Kin Tak

AU - Chang, Sheng Po

AU - Kuan, Chieh Yu

AU - Chang, Shoou Jinn

PY - 2024

Y1 - 2024

N2 - In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo-dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In2O3 target and 5 W for the WO3 target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 106, a responsivity of 160 A W−1, and a UV-to-visible rejection ratio of 4.71 × 104. Also, time-dependent switching properties have been demonstrated.

AB - In this study, we deposit tungsten-doped indium oxide (InWO) thin films as an active layer for ultraviolet (UV) photodetectors (PDs) by radio-frequency (RF) magnetron cosputtering and discuss the optical and electrical properties of the thin film under different process conditions. The introduction of oxygen gas during the thermal annealing of oxide thin films leads to further rearrangement of the lattice and fulfills the oxygen deficiency region. When InWO thin films are thermally annealed in oxygen ambient, its photo-dark current ratio can be greatly improved. Thus, InWO UV PDs with active layers fabricated by cosputtering with sputtering powers of 80 W for the In2O3 target and 5 W for the WO3 target followed by thermal annealing for 1 h in oxygen ambient have the highest performance with an ON/OFF current ratio greater than 106, a responsivity of 160 A W−1, and a UV-to-visible rejection ratio of 4.71 × 104. Also, time-dependent switching properties have been demonstrated.

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JF - Sensors and Materials

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ER -

Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

Abstract

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