Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes

Research output: Contribution to journalReview article

61 Citations (Scopus)

Abstract

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm-1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

Original languageEnglish
Pages (from-to)2218-2259
Number of pages42
JournalMaterials
Volume3
Issue number4
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Zinc Oxide
Zinc oxide
Light emitting diodes
Fabrication
Impurities
Optical gain
Binding energy
Nanorods
Excitons
Optoelectronic devices
Oxide films
Nanostructures
Energy gap
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{1dedbd1c9ab546d08614edc3e64d0797,
title = "Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes",
abstract = "Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm-1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.",
author = "Lee, {Ching Ting}",
year = "2010",
month = "12",
day = "1",
doi = "10.3390/ma3042218",
language = "English",
volume = "3",
pages = "2218--2259",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "4",

}

Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes. / Lee, Ching Ting.

In: Materials, Vol. 3, No. 4, 01.12.2010, p. 2218-2259.

Research output: Contribution to journalReview article

TY - JOUR

T1 - Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes

AU - Lee, Ching Ting

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm-1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

AB - Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm-1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

UR - http://www.scopus.com/inward/record.url?scp=77956200157&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956200157&partnerID=8YFLogxK

U2 - 10.3390/ma3042218

DO - 10.3390/ma3042218

M3 - Review article

AN - SCOPUS:77956200157

VL - 3

SP - 2218

EP - 2259

JO - Materials

JF - Materials

SN - 1996-1944

IS - 4

ER -