Fabrication of δ-Bi2O3 Nanowires

C. C. Huang, I. C. Leu, Kuan-Zong Fung

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

δ-Bi2O3 nanowires were successfully fabricated using a thermal enhanced process on electroplated Bi nanowires. Bi was first prepared using template-assisted electroplating. After thermal modification at 350°C for 12 h in air, Bi2O3 nanowires with high-temperature phase (δ-phase) were obtained. A Bi/Bi2O 3 core-shell structure was examined by high-resolution transmission electron microscopy (HRTEM) after the Bi nanowires heated at 250°C for 12 h. The oxidation reaction of Bi occurred at temperatures below the melting point of Bi (271.3°C). According to the analysis of HRTEM, the formation of high-temperature δ-phase is caused by the coherent relationship between Bi and Bi2O3 nanowires.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number4
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

Nanowires
nanowires
Fabrication
fabrication
High resolution transmission electron microscopy
transmission electron microscopy
high resolution
electroplating
Electroplating
Temperature
melting points
Melting point
templates
Oxidation
oxidation
air
Air
temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "δ-Bi2O3 nanowires were successfully fabricated using a thermal enhanced process on electroplated Bi nanowires. Bi was first prepared using template-assisted electroplating. After thermal modification at 350°C for 12 h in air, Bi2O3 nanowires with high-temperature phase (δ-phase) were obtained. A Bi/Bi2O 3 core-shell structure was examined by high-resolution transmission electron microscopy (HRTEM) after the Bi nanowires heated at 250°C for 12 h. The oxidation reaction of Bi occurred at temperatures below the melting point of Bi (271.3°C). According to the analysis of HRTEM, the formation of high-temperature δ-phase is caused by the coherent relationship between Bi and Bi2O3 nanowires.",
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Fabrication of δ-Bi2O3 Nanowires. / Huang, C. C.; Leu, I. C.; Fung, Kuan-Zong.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 4, 01.01.2005.

Research output: Contribution to journalArticle

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AU - Leu, I. C.

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N2 - δ-Bi2O3 nanowires were successfully fabricated using a thermal enhanced process on electroplated Bi nanowires. Bi was first prepared using template-assisted electroplating. After thermal modification at 350°C for 12 h in air, Bi2O3 nanowires with high-temperature phase (δ-phase) were obtained. A Bi/Bi2O 3 core-shell structure was examined by high-resolution transmission electron microscopy (HRTEM) after the Bi nanowires heated at 250°C for 12 h. The oxidation reaction of Bi occurred at temperatures below the melting point of Bi (271.3°C). According to the analysis of HRTEM, the formation of high-temperature δ-phase is caused by the coherent relationship between Bi and Bi2O3 nanowires.

AB - δ-Bi2O3 nanowires were successfully fabricated using a thermal enhanced process on electroplated Bi nanowires. Bi was first prepared using template-assisted electroplating. After thermal modification at 350°C for 12 h in air, Bi2O3 nanowires with high-temperature phase (δ-phase) were obtained. A Bi/Bi2O 3 core-shell structure was examined by high-resolution transmission electron microscopy (HRTEM) after the Bi nanowires heated at 250°C for 12 h. The oxidation reaction of Bi occurred at temperatures below the melting point of Bi (271.3°C). According to the analysis of HRTEM, the formation of high-temperature δ-phase is caused by the coherent relationship between Bi and Bi2O3 nanowires.

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