TY - GEN
T1 - Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding
AU - Nomura, Kazuya
AU - Mizuno, Jun
AU - Okada, Akiko
AU - Shoji, Shuichi
AU - Ogashiwa, Toshinori
N1 - Publisher Copyright:
© 2015 The Japan Institute of Electronics Packaging.
PY - 2015/5/20
Y1 - 2015/5/20
N2 - We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.
AB - We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.
UR - https://www.scopus.com/pages/publications/84936162848
UR - https://www.scopus.com/pages/publications/84936162848#tab=citedBy
U2 - 10.1109/ICEP-IAAC.2015.7111054
DO - 10.1109/ICEP-IAAC.2015.7111054
M3 - Conference contribution
AN - SCOPUS:84936162848
T3 - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
SP - 444
EP - 447
BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Y2 - 14 April 2015 through 17 April 2015
ER -