Fabrication of a novel porous Ni-P thin-film using electroless-plating

Application to embedded thin-film resistor

Guoyun Zhou, Wei He, Shouxu Wang, Chia-Yun Chen, Ching Ping Wong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A novel porous Ni-P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1 μm to 3.0 μm was formed in Ni-P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50 g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H 2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75%. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15% indicated this porous Ni-P thin-film is a very practical candidate to fabricate embedded resistors.

Original languageEnglish
Pages (from-to)75-78
Number of pages4
JournalMaterials Letters
Volume108
DOIs
Publication statusPublished - 2013 Jul 23

Fingerprint

Electroless plating
plating
resistors
Resistors
Fabrication
Thin films
fabrication
thin films
deviation
manganese ions
electroless deposition
Manganese
Electrolytes
electrolytes
Ions
porosity
Scanning electron microscopy
scanning electron microscopy
Testing
Experiments

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{cdf90a29ca224e758874aeaced950eee,
title = "Fabrication of a novel porous Ni-P thin-film using electroless-plating: Application to embedded thin-film resistor",
abstract = "A novel porous Ni-P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1 μm to 3.0 μm was formed in Ni-P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50 g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H 2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75{\%}. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15{\%} indicated this porous Ni-P thin-film is a very practical candidate to fabricate embedded resistors.",
author = "Guoyun Zhou and Wei He and Shouxu Wang and Chia-Yun Chen and Wong, {Ching Ping}",
year = "2013",
month = "7",
day = "23",
doi = "10.1016/j.matlet.2013.06.087",
language = "English",
volume = "108",
pages = "75--78",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

Fabrication of a novel porous Ni-P thin-film using electroless-plating : Application to embedded thin-film resistor. / Zhou, Guoyun; He, Wei; Wang, Shouxu; Chen, Chia-Yun; Wong, Ching Ping.

In: Materials Letters, Vol. 108, 23.07.2013, p. 75-78.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of a novel porous Ni-P thin-film using electroless-plating

T2 - Application to embedded thin-film resistor

AU - Zhou, Guoyun

AU - He, Wei

AU - Wang, Shouxu

AU - Chen, Chia-Yun

AU - Wong, Ching Ping

PY - 2013/7/23

Y1 - 2013/7/23

N2 - A novel porous Ni-P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1 μm to 3.0 μm was formed in Ni-P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50 g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H 2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75%. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15% indicated this porous Ni-P thin-film is a very practical candidate to fabricate embedded resistors.

AB - A novel porous Ni-P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1 μm to 3.0 μm was formed in Ni-P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50 g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H 2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75%. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15% indicated this porous Ni-P thin-film is a very practical candidate to fabricate embedded resistors.

UR - http://www.scopus.com/inward/record.url?scp=84880268986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880268986&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2013.06.087

DO - 10.1016/j.matlet.2013.06.087

M3 - Article

VL - 108

SP - 75

EP - 78

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -