Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

Chih Han Chen, Shoou-Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, An Di Hsu, Cheng Liang Hsu

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

Original languageEnglish
Pages (from-to)12422-12426
Number of pages5
JournalJournal of Physical Chemistry C
Volume114
Issue number29
DOIs
Publication statusPublished - 2010 Jul 29

Fingerprint

Gallium
Nanowires
gallium
Light emitting diodes
nanowires
light emitting diodes
Doping (additives)
Fabrication
fabrication
Substrates
ITO glass
Electroluminescence
ITO (semiconductors)
photographs
electroluminescence
Heterojunctions
heterojunctions
Chemical vapor deposition
vapor deposition
broadband

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Chen, Chih Han ; Chang, Shoou-Jinn ; Chang, Sheng Po ; Li, Meng Ju ; Chen, I. Cherng ; Hsueh, Ting Jen ; Hsu, An Di ; Hsu, Cheng Liang. / Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate. In: Journal of Physical Chemistry C. 2010 ; Vol. 114, No. 29. pp. 12422-12426.
@article{048ce47cc5cd4161b8b3a8c019a489e1,
title = "Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate",
abstract = "This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.",
author = "Chen, {Chih Han} and Shoou-Jinn Chang and Chang, {Sheng Po} and Li, {Meng Ju} and Chen, {I. Cherng} and Hsueh, {Ting Jen} and Hsu, {An Di} and Hsu, {Cheng Liang}",
year = "2010",
month = "7",
day = "29",
doi = "10.1021/jp101392g",
language = "English",
volume = "114",
pages = "12422--12426",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "29",

}

Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate. / Chen, Chih Han; Chang, Shoou-Jinn; Chang, Sheng Po; Li, Meng Ju; Chen, I. Cherng; Hsueh, Ting Jen; Hsu, An Di; Hsu, Cheng Liang.

In: Journal of Physical Chemistry C, Vol. 114, No. 29, 29.07.2010, p. 12422-12426.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

AU - Chen, Chih Han

AU - Chang, Shoou-Jinn

AU - Chang, Sheng Po

AU - Li, Meng Ju

AU - Chen, I. Cherng

AU - Hsueh, Ting Jen

AU - Hsu, An Di

AU - Hsu, Cheng Liang

PY - 2010/7/29

Y1 - 2010/7/29

N2 - This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

AB - This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

UR - http://www.scopus.com/inward/record.url?scp=77954942458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954942458&partnerID=8YFLogxK

U2 - 10.1021/jp101392g

DO - 10.1021/jp101392g

M3 - Article

AN - SCOPUS:77954942458

VL - 114

SP - 12422

EP - 12426

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 29

ER -