Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, An Di Hsu, Cheng Liang Hsu

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

Original languageEnglish
Pages (from-to)12422-12426
Number of pages5
JournalJournal of Physical Chemistry C
Volume114
Issue number29
DOIs
Publication statusPublished - 2010 Jul 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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