Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

Chih Han Chen; Shoou Jinn Chang; Sheng Po Chang; Meng Ju Li; I. Cherng Chen; Ting Jen Hsueh; An Di Hsu; Cheng Liang Hsu

doi:10.1021/jp101392g

Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, An Di Hsu, Cheng Liang Hsu

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

Original language	English
Pages (from-to)	12422-12426
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	114
Issue number	29
DOIs	https://doi.org/10.1021/jp101392g
Publication status	Published - 2010 Jul 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp101392g

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title = "Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate",

abstract = "This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.",

author = "Chen, {Chih Han} and Chang, {Shoou Jinn} and Chang, {Sheng Po} and Li, {Meng Ju} and Chen, {I. Cherng} and Hsueh, {Ting Jen} and Hsu, {An Di} and Hsu, {Cheng Liang}",

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T1 - Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

AU - Chen, Chih Han

AU - Chang, Shoou Jinn

AU - Chang, Sheng Po

AU - Li, Meng Ju

AU - Chen, I. Cherng

AU - Hsueh, Ting Jen

AU - Hsu, An Di

AU - Hsu, Cheng Liang

PY - 2010/7/29

Y1 - 2010/7/29

N2 - This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

AB - This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.

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Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate

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