TY - JOUR
T1 - Fabrication of antireflective nanostructures for crystalline silicon solar cells by reactive ion etching
AU - Lin, Hsin Han
AU - Chen, Wen Hua
AU - Wang, Chi Jen
AU - Hong, Franklin Chau Nan
N1 - Funding Information:
We gratefully acknowledge support for this work from the High-Tech Equipment Future Technology Development Plan under grant 302202501 and the Ministry of Economic Affairs (Taiwan, ROC) through projects 99-D0204-2 .
PY - 2013/2/1
Y1 - 2013/2/1
N2 - In this study we have fabricated large-area (15 × 15 cm2) subwavelength antireflection structure on poly-Si substrates to reduce their solar reflectivity. A reactive ion etching system was used to fabricate nanostructures on the poly-silicon surface. Reactive gases, composed of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O 2), were activated to fabricate nanoscale pyramids by RF plasma. The poly-Si substrates were etched in various gas compositions for 6-10 min to form nano-pyramids. The sizes of pyramids were about 200-300 nm in heights and about 100 nm in width. Besides the nanoscale features, the high pyramid density on the poly-Si surface is another important factor to reduce the reflectivity. Low-reflectivity surface was fabricated with reflectivity significantly reduced down to < 2% for photons in a wavelength range of 500-900 nm.
AB - In this study we have fabricated large-area (15 × 15 cm2) subwavelength antireflection structure on poly-Si substrates to reduce their solar reflectivity. A reactive ion etching system was used to fabricate nanostructures on the poly-silicon surface. Reactive gases, composed of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O 2), were activated to fabricate nanoscale pyramids by RF plasma. The poly-Si substrates were etched in various gas compositions for 6-10 min to form nano-pyramids. The sizes of pyramids were about 200-300 nm in heights and about 100 nm in width. Besides the nanoscale features, the high pyramid density on the poly-Si surface is another important factor to reduce the reflectivity. Low-reflectivity surface was fabricated with reflectivity significantly reduced down to < 2% for photons in a wavelength range of 500-900 nm.
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U2 - 10.1016/j.tsf.2012.09.047
DO - 10.1016/j.tsf.2012.09.047
M3 - Article
AN - SCOPUS:84873734657
VL - 529
SP - 138
EP - 142
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -