Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging

Wei Lan Chiu, Chia Ling Lu, Han Wen Lin, Chien Min Liu, Yi Sa Huang, Tien Lin Lu, Tao Chi Liu, Hsiang Yao Hsiao, Chih Chen, Jui-Chao Kuo, King Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Due to the thousands of microbumps on a chip for 3D ICs, the precise control of the microstructure of all the material is required. The nearly <111>-oriented nanotwinned and fine-grained Cu was electroplated on a Si wafer surface and annealed at 400-500 °C for 1 h, many extremely large <100>-oriented Cu crystals with grain sizes ranging from 200 to 400 μm were obtained. The <111>-oriented Cu grains were transformed into super-large <100>-oriented grains after the annealing. In addition, we patterned the <111>-oriented Cu films into pad arrays of 25 to 100 μm in diameter and annealed the nanotwinned Cu pads with same conditions. An array of <100>-oriented single crystals Cu pads can be obtained. Otherwise, single-crystal nano-wire growth displays a process by one-dimensional anisotropic growth, in which the growth along the axial direction is much faster than in the radial direction. This study reported here a bulk-type two-dimensional crystal growth of an array of numerous <100>-oriented single crystals of Cu on Si. The growth process in 3D IC has the potential for microbump applications packaging technology.

Original languageEnglish
Title of host publicationICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages518-522
Number of pages5
ISBN (Electronic)9784904090138
DOIs
Publication statusPublished - 2015 May 20
Event2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
Duration: 2015 Apr 142015 Apr 17

Publication series

NameICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
CountryJapan
CityKyoto
Period15-04-1415-04-17

Fingerprint

Metallizing
Packaging
Fabrication
Single crystals
Crystal growth
Wire
Annealing
Crystals
Microstructure

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chiu, W. L., Lu, C. L., Lin, H. W., Liu, C. M., Huang, Y. S., Lu, T. L., ... Tu, K. N. (2015). Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 518-522). [7111069] (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111069
Chiu, Wei Lan ; Lu, Chia Ling ; Lin, Han Wen ; Liu, Chien Min ; Huang, Yi Sa ; Lu, Tien Lin ; Liu, Tao Chi ; Hsiao, Hsiang Yao ; Chen, Chih ; Kuo, Jui-Chao ; Tu, King Ning. / Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 518-522 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).
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abstract = "Due to the thousands of microbumps on a chip for 3D ICs, the precise control of the microstructure of all the material is required. The nearly <111>-oriented nanotwinned and fine-grained Cu was electroplated on a Si wafer surface and annealed at 400-500 °C for 1 h, many extremely large <100>-oriented Cu crystals with grain sizes ranging from 200 to 400 μm were obtained. The <111>-oriented Cu grains were transformed into super-large <100>-oriented grains after the annealing. In addition, we patterned the <111>-oriented Cu films into pad arrays of 25 to 100 μm in diameter and annealed the nanotwinned Cu pads with same conditions. An array of <100>-oriented single crystals Cu pads can be obtained. Otherwise, single-crystal nano-wire growth displays a process by one-dimensional anisotropic growth, in which the growth along the axial direction is much faster than in the radial direction. This study reported here a bulk-type two-dimensional crystal growth of an array of numerous <100>-oriented single crystals of Cu on Si. The growth process in 3D IC has the potential for microbump applications packaging technology.",
author = "Chiu, {Wei Lan} and Lu, {Chia Ling} and Lin, {Han Wen} and Liu, {Chien Min} and Huang, {Yi Sa} and Lu, {Tien Lin} and Liu, {Tao Chi} and Hsiao, {Hsiang Yao} and Chih Chen and Jui-Chao Kuo and Tu, {King Ning}",
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Chiu, WL, Lu, CL, Lin, HW, Liu, CM, Huang, YS, Lu, TL, Liu, TC, Hsiao, HY, Chen, C, Kuo, J-C & Tu, KN 2015, Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111069, ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, Institute of Electrical and Electronics Engineers Inc., pp. 518-522, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15-04-14. https://doi.org/10.1109/ICEP-IAAC.2015.7111069

Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging. / Chiu, Wei Lan; Lu, Chia Ling; Lin, Han Wen; Liu, Chien Min; Huang, Yi Sa; Lu, Tien Lin; Liu, Tao Chi; Hsiao, Hsiang Yao; Chen, Chih; Kuo, Jui-Chao; Tu, King Ning.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 518-522 7111069 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging

AU - Chiu, Wei Lan

AU - Lu, Chia Ling

AU - Lin, Han Wen

AU - Liu, Chien Min

AU - Huang, Yi Sa

AU - Lu, Tien Lin

AU - Liu, Tao Chi

AU - Hsiao, Hsiang Yao

AU - Chen, Chih

AU - Kuo, Jui-Chao

AU - Tu, King Ning

PY - 2015/5/20

Y1 - 2015/5/20

N2 - Due to the thousands of microbumps on a chip for 3D ICs, the precise control of the microstructure of all the material is required. The nearly <111>-oriented nanotwinned and fine-grained Cu was electroplated on a Si wafer surface and annealed at 400-500 °C for 1 h, many extremely large <100>-oriented Cu crystals with grain sizes ranging from 200 to 400 μm were obtained. The <111>-oriented Cu grains were transformed into super-large <100>-oriented grains after the annealing. In addition, we patterned the <111>-oriented Cu films into pad arrays of 25 to 100 μm in diameter and annealed the nanotwinned Cu pads with same conditions. An array of <100>-oriented single crystals Cu pads can be obtained. Otherwise, single-crystal nano-wire growth displays a process by one-dimensional anisotropic growth, in which the growth along the axial direction is much faster than in the radial direction. This study reported here a bulk-type two-dimensional crystal growth of an array of numerous <100>-oriented single crystals of Cu on Si. The growth process in 3D IC has the potential for microbump applications packaging technology.

AB - Due to the thousands of microbumps on a chip for 3D ICs, the precise control of the microstructure of all the material is required. The nearly <111>-oriented nanotwinned and fine-grained Cu was electroplated on a Si wafer surface and annealed at 400-500 °C for 1 h, many extremely large <100>-oriented Cu crystals with grain sizes ranging from 200 to 400 μm were obtained. The <111>-oriented Cu grains were transformed into super-large <100>-oriented grains after the annealing. In addition, we patterned the <111>-oriented Cu films into pad arrays of 25 to 100 μm in diameter and annealed the nanotwinned Cu pads with same conditions. An array of <100>-oriented single crystals Cu pads can be obtained. Otherwise, single-crystal nano-wire growth displays a process by one-dimensional anisotropic growth, in which the growth along the axial direction is much faster than in the radial direction. This study reported here a bulk-type two-dimensional crystal growth of an array of numerous <100>-oriented single crystals of Cu on Si. The growth process in 3D IC has the potential for microbump applications packaging technology.

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M3 - Conference contribution

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BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

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Chiu WL, Lu CL, Lin HW, Liu CM, Huang YS, Lu TL et al. Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 518-522. 7111069. (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). https://doi.org/10.1109/ICEP-IAAC.2015.7111069