Fabrication of bismuth nanowire devices using focused ion beam milling

H. H. Cheng, M. M. Alkaisi, S. E. Wu, C. P. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30nm to 100nm have been successfully fabricated by milling out unwanted areas using 30KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50nm bismuth nanowires, a drilland- fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically characterised using a semiconductor analyzer that showed good ohmic contact to the electrodes. In this paper, the fabrication experiments and the characterization results for Bi nanowires as small as 50nm in diameter are presented. Several FIB issues involved in Bi device making and ohmic contacts to Bi nanowires will also be discussed.

Original languageEnglish
Title of host publicationAdvanced Materials and Nanotechnology - Proceedings of the International Conference (AMN-4)
Pages48-51
Number of pages4
DOIs
Publication statusPublished - 2009 Nov 25
Event4th International Conference on Advanced Materials and Nanotechnology, AMN-4 - Dunedin, New Zealand
Duration: 2009 Feb 82009 Feb 12

Publication series

NameAIP Conference Proceedings
Volume1151
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other4th International Conference on Advanced Materials and Nanotechnology, AMN-4
CountryNew Zealand
CityDunedin
Period09-02-0809-02-12

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cheng, H. H., Alkaisi, M. M., Wu, S. E., & Liu, C. P. (2009). Fabrication of bismuth nanowire devices using focused ion beam milling. In Advanced Materials and Nanotechnology - Proceedings of the International Conference (AMN-4) (pp. 48-51). (AIP Conference Proceedings; Vol. 1151). https://doi.org/10.1063/1.3203244