Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

H. T. Hsueh; S. J. Chang; F. Y. Hung; W. Y. Weng; C. L. Hsu; T. J. Hsueh; T. Y. Tsai; B. T. Dai

doi:10.1016/j.spmi.2011.03.011

Fabrication of coaxial p-Cu₂O/n-ZnO nanowire photodiodes

H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai, B. T. Dai

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The authors report the deposition of Cu₂O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm², respectively. With proper sputtering parameters, the deposited Cu₂O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu₂O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu₂O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.

Original language	English
Pages (from-to)	572-580
Number of pages	9
Journal	Superlattices and Microstructures
Volume	49
Issue number	5
DOIs	https://doi.org/10.1016/j.spmi.2011.03.011
Publication status	Published - 2011 May

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2011.03.011

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@article{e599ed53e05142b3baa3d4d49fd8f12e,

title = "Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes",

abstract = "The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.",

author = "Hsueh, {H. T.} and Chang, {S. J.} and Hung, {F. Y.} and Weng, {W. Y.} and Hsu, {C. L.} and Hsueh, {T. J.} and Tsai, {T. Y.} and Dai, {B. T.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.",

year = "2011",

month = may,

doi = "10.1016/j.spmi.2011.03.011",

language = "English",

volume = "49",

pages = "572--580",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "5",

}

TY - JOUR

T1 - Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

AU - Hsueh, H. T.

AU - Chang, S. J.

AU - Hung, F. Y.

AU - Weng, W. Y.

AU - Hsu, C. L.

AU - Hsueh, T. J.

AU - Tsai, T. Y.

AU - Dai, B. T.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.

PY - 2011/5

Y1 - 2011/5

N2 - The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.

AB - The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.

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DO - 10.1016/j.spmi.2011.03.011

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AN - SCOPUS:79955478792

SN - 0749-6036

VL - 49

SP - 572

EP - 580

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

ER -

Fabrication of coaxial p-Cu₂O/n-ZnO nanowire photodiodes

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