Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai, B. T. Dai

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15 Citations (Scopus)

Abstract

The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.

Original languageEnglish
Pages (from-to)572-580
Number of pages9
JournalSuperlattices and Microstructures
Volume49
Issue number5
DOIs
Publication statusPublished - 2011 May 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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