Fabrication of crack-free metal-semiconductor-metal ultraviolet photodetectors on Si (111) substrates based on novel AlN/AlGaN buffer multilayer scheme

S. P. Chang, R. Chuang, S. J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaN ultraviolet metal-semiconductor-metal (MSM) photodetectors epitaxially grown on Si (111) and sapphire (0001) substrates were prepared and characterized, By implementing our elaborate AIN/AlGaN buffer multilayer scheme on Si, the maximum responsivity of n̄-GaN MSM photodetector with TiW transparent electrodes achieved at an incident wavelength of 359 nm was 0.187 A/W, which corresponds to the quantum efficiency of 64.7%. Furthermore, for a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent power (NEP) of aforementioned photodetector was 1.53×10 -12 W, winch translates to a maximal detectivity (D*) of 1.31×1012 cm-Hz0.5W-1.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages117-128
Number of pages12
Edition5
DOIs
Publication statusPublished - 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07-10-0707-10-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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