@inproceedings{a4768ca69a6d4148b98c012bbff37cd8,
title = "Fabrication of crack-free metal-semiconductor-metal ultraviolet photodetectors on Si (111) substrates based on novel AlN/AlGaN buffer multilayer scheme",
abstract = "The GaN ultraviolet metal-semiconductor-metal (MSM) photodetectors epitaxially grown on Si (111) and sapphire (0001) substrates were prepared and characterized, By implementing our elaborate AIN/AlGaN buffer multilayer scheme on Si, the maximum responsivity of {\=n}-GaN MSM photodetector with TiW transparent electrodes achieved at an incident wavelength of 359 nm was 0.187 A/W, which corresponds to the quantum efficiency of 64.7%. Furthermore, for a given bandwidth of 1 kHz and a given bias of 5 V, the corresponding noise equivalent power (NEP) of aforementioned photodetector was 1.53×10 -12 W, winch translates to a maximal detectivity (D*) of 1.31×1012 cm-Hz0.5W-1.",
author = "Chang, {S. P.} and R. Chuang and Chang, {S. J.}",
year = "2007",
doi = "10.1149/1.2783865",
language = "English",
isbn = "9781566775717",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "117--128",
booktitle = "ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices",
edition = "5",
note = "47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}