Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask

Jau Yi Wu; Hwei Heng Wang; Yeong Her Wang; Mau Phon Houng

doi:10.1109/55.892425

Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask

Jau Yi Wu, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows the transconductance of 90 mS/mm and the maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency f_T of 6.5 GHz and a maximum oscillation frequency f_max of 18.3 GHz have been achieved from the 1μm × 100 μm GaAs MOSFET.

Original language	English
Pages (from-to)	2-4
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/55.892425
Publication status	Published - 2001 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.892425

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title = "Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask",

abstract = "The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows the transconductance of 90 mS/mm and the maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency fT of 6.5 GHz and a maximum oscillation frequency fmax of 18.3 GHz have been achieved from the 1μm × 100 μm GaAs MOSFET.",

author = "Wu, {Jau Yi} and Wang, {Hwei Heng} and Wang, {Yeong Her} and Houng, {Mau Phon}",

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T1 - Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask

AU - Wu, Jau Yi

AU - Wang, Hwei Heng

AU - Wang, Yeong Her

AU - Houng, Mau Phon

PY - 2001/1/1

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N2 - The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows the transconductance of 90 mS/mm and the maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency fT of 6.5 GHz and a maximum oscillation frequency fmax of 18.3 GHz have been achieved from the 1μm × 100 μm GaAs MOSFET.

AB - The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows the transconductance of 90 mS/mm and the maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency fT of 6.5 GHz and a maximum oscillation frequency fmax of 18.3 GHz have been achieved from the 1μm × 100 μm GaAs MOSFET.

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