Abstract
The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows the transconductance of 90 mS/mm and the maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency fT of 6.5 GHz and a maximum oscillation frequency fmax of 18.3 GHz have been achieved from the 1μm × 100 μm GaAs MOSFET.
Original language | English |
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Pages (from-to) | 2-4 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering