@article{916e60cf26aa4c58af0bce33bca78f58,
title = "Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques",
abstract = "Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.",
author = "Chen, {Shiue Lung} and Wang, {Shui Jinn} and Uang, {Kai Ming} and Chen, {Tron Min} and Lee, {Wei Chi} and Liou, {Bor We}",
note = "Funding Information: Manuscript received August 18, 2006; revised December 20, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-93-2215-E-006-001 and Contract NSC-94-2215-E-006-056. S.-L. Chen, S.-J. Wang, T.-M. Chen, and W.-C. Lee are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. (e-mail: sjwang@mail.ncku.edu.tw). K.-M. Uang is with the Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. B.-W. Liou is with the Department of Computer Science and Information Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.891634",
year = "2007",
month = mar,
day = "15",
doi = "10.1109/LPT.2007.891634",
language = "English",
volume = "19",
pages = "351--353",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}