Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques

Shiue Lung Chen, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Bor We Liou

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.

Original languageEnglish
Pages (from-to)351-353
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number6
DOIs
Publication statusPublished - 2007 Mar 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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