Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques

Shiue Lung Chen; Shui Jinn Wang; Kai Ming Uang; Tron Min Chen; Wei Chi Lee; Bor We Liou

doi:10.1109/LPT.2007.891634

Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques

Shiue Lung Chen, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Bor We Liou

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO₂and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.

Original language	English
Pages (from-to)	351-353
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2007.891634
Publication status	Published - 2007 Mar 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{916e60cf26aa4c58af0bce33bca78f58,

title = "Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques",

abstract = "Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.",

author = "Chen, {Shiue Lung} and Wang, {Shui Jinn} and Uang, {Kai Ming} and Chen, {Tron Min} and Lee, {Wei Chi} and Liou, {Bor We}",

note = "Funding Information: Manuscript received August 18, 2006; revised December 20, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-93-2215-E-006-001 and Contract NSC-94-2215-E-006-056. S.-L. Chen, S.-J. Wang, T.-M. Chen, and W.-C. Lee are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. (e-mail: sjwang@mail.ncku.edu.tw). K.-M. Uang is with the Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. B.-W. Liou is with the Department of Computer Science and Information Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.891634",

year = "2007",

month = mar,

day = "15",

doi = "10.1109/LPT.2007.891634",

language = "English",

volume = "19",

pages = "351--353",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques. / Chen, Shiue Lung; Wang, Shui Jinn; Uang, Kai Ming; Chen, Tron Min; Lee, Wei Chi; Liou, Bor We.

In: IEEE Photonics Technology Letters, Vol. 19, No. 6, 15.03.2007, p. 351-353.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques

AU - Chen, Shiue Lung

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Lee, Wei Chi

AU - Liou, Bor We

N1 - Funding Information: Manuscript received August 18, 2006; revised December 20, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-93-2215-E-006-001 and Contract NSC-94-2215-E-006-056. S.-L. Chen, S.-J. Wang, T.-M. Chen, and W.-C. Lee are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. (e-mail: sjwang@mail.ncku.edu.tw). K.-M. Uang is with the Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. B.-W. Liou is with the Department of Computer Science and Information Engineering, WuFeng Institute of Technology, Chia-yi 621, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.891634

PY - 2007/3/15

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N2 - Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.

AB - Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO2and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V.

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