Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Chih Cheng Wang, Hou Kuei Huang, Yeong Her Wang, Mau Phon Houng, Chang Luen Wu, Chian Sern Chang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.

Original languageEnglish
Pages (from-to)1683-1686
Number of pages4
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2004 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation'. Together they form a unique fingerprint.

Cite this