Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Chih Cheng Wang; Hou Kuei Huang; Yeong Her Wang; Mau Phon Houng; Chang Luen Wu; Chian Sern Chang

doi:10.1016/j.sse.2004.03.003

Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Chih Cheng Wang
, Hou Kuei Huang
, Yeong Her Wang
, Mau Phon Houng
, Chang Luen Wu
, Chian Sern Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si₃N₄ passivated devices.

Original language	English
Pages (from-to)	1683-1686
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2004.03.003
Publication status	Published - 2004 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2004.03.003

Cite this

@article{cfeb96785347481384095240970a89d3,

title = "Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation",

abstract = "A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6\% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.",

author = "Wang, \{Chih Cheng\} and Huang, \{Hou Kuei\} and Wang, \{Yeong Her\} and Houng, \{Mau Phon\} and Wu, \{Chang Luen\} and Chang, \{Chian Sern\}",

note = "Funding Information: This work was supported in part by the National Science Council under contract NSC 91-2215-E-006-017, NSC92-2215-E006-008, MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4 and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.",

year = "2004",

month = sep,

doi = "10.1016/j.sse.2004.03.003",

language = "English",

volume = "48",

pages = "1683--1686",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

AU - Wang, Chih Cheng

AU - Huang, Hou Kuei

AU - Wang, Yeong Her

AU - Houng, Mau Phon

AU - Wu, Chang Luen

AU - Chang, Chian Sern

N1 - Funding Information: This work was supported in part by the National Science Council under contract NSC 91-2215-E-006-017, NSC92-2215-E006-008, MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4 and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.

PY - 2004/9

Y1 - 2004/9

N2 - A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.

AB - A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance the breakdown voltage as compared to the other methods. With the selective oxidation between photoresistor and GaAs, this fabrication process can be further simplified. The process yield of Schottky diode wafer can be as high as 90.6% for a 3-in. diameter wafer. Besides, better RF performance can also be achieved as compared to those of Si3N4 passivated devices.

UR - https://www.scopus.com/pages/publications/2942644395

UR - https://www.scopus.com/pages/publications/2942644395#tab=citedBy

U2 - 10.1016/j.sse.2004.03.003

DO - 10.1016/j.sse.2004.03.003

M3 - Article

AN - SCOPUS:2942644395

SN - 0038-1101

VL - 48

SP - 1683

EP - 1686

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

Abstract

All Science Journal Classification (ASJC) codes

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