Fabrication of gallium nitride nanowires by nitrogen plasma

The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N₂ plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N₂ gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N₂ plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace.