Fabrication of gallium nitride nanowires by nitrogen plasma

Wen Chi Hou, Liang Yih Chen, Franklin Chau Nan Hong

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N2 plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N2 gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N2 plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace.

Original languageEnglish
Pages (from-to)1780-1784
Number of pages5
JournalDiamond and Related Materials
Issue number7-10
Publication statusPublished - 2008 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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