Abstract
The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N2 plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N2 gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N2 plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace.
Original language | English |
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Pages (from-to) | 1780-1784 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 17 |
Issue number | 7-10 |
DOIs | |
Publication status | Published - 2008 Jul 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering