TY - JOUR
T1 - Fabrication of gallium nitride nanowires by nitrogen plasma
AU - Hou, Wen Chi
AU - Chen, Liang Yih
AU - Hong, Franklin Chau Nan
N1 - Funding Information:
The authors are grateful for the assistance of I. H. Chen in the HRAEM analysis. We thank Mr. Patrick Chen for valuable discussions. We gratefully acknowledge the support for this work from the National Science Council, under the NSC-96-2221-E-006-057.
PY - 2008/7
Y1 - 2008/7
N2 - The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N2 plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N2 gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N2 plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace.
AB - The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N2 plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N2 gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N2 plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace.
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U2 - 10.1016/j.diamond.2008.02.003
DO - 10.1016/j.diamond.2008.02.003
M3 - Article
AN - SCOPUS:48849087497
VL - 17
SP - 1780
EP - 1784
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 7-10
ER -