Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Tzu Chieh Hong; Wen Hsiang Lu; Yeong Her Wang; Jiun Yun Li; Yao Jen Lee; Tien Sheng Chao

doi:10.1109/TED.2023.3246952

Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Tzu Chieh Hong, Wen Hsiang Lu, Yeong Her Wang, Jiun Yun Li, Yao Jen Lee, Tien Sheng Chao

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.

Original language	English
Pages (from-to)	2028-2033
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	4
DOIs	https://doi.org/10.1109/TED.2023.3246952
Publication status	Published - 2023 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2023.3246952

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title = "Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques",

abstract = "Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.",

author = "Hong, {Tzu Chieh} and Lu, {Wen Hsiang} and Wang, {Yeong Her} and Li, {Jiun Yun} and Lee, {Yao Jen} and Chao, {Tien Sheng}",

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doi = "10.1109/TED.2023.3246952",

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T1 - Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

AU - Hong, Tzu Chieh

AU - Lu, Wen Hsiang

AU - Wang, Yeong Her

AU - Li, Jiun Yun

AU - Lee, Yao Jen

AU - Chao, Tien Sheng

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.

AB - Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.

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Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

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