Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

Chung Yih Sun; Wen Chau Liu; Der Feng Guo; Wen Shiung Lour; Rong Chau Liu

doi:10.1006/spmi.1993.1015

Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

Chung Yih Sun, Wen Chau Liu, Der Feng Guo, Wen Shiung Lour, Rong Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Superlattices and Microstructures
Volume	13
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1993.1015
Publication status	Published - 1993 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1993.1015

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title = "Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector",

abstract = "Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.",

author = "Sun, {Chung Yih} and Liu, {Wen Chau} and Guo, {Der Feng} and Lour, {Wen Shiung} and Liu, {Rong Chau}",

year = "1993",

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doi = "10.1006/spmi.1993.1015",

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T1 - Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

AU - Sun, Chung Yih

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Lour, Wen Shiung

AU - Liu, Rong Chau

PY - 1993/1

Y1 - 1993/1

N2 - Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.

AB - Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.

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