Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

Chung Yih Sun, Wen Chau Liu, Der Feng Guo, Wen Shiung Lour, Rong Chau Liu

Research output: Contribution to journalArticlepeer-review


Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 1993 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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