Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Hsin Yu Liu, Donghao Zhang, Zhongying Zhang, Chaohsu Lai, Zongmin Lin, Chia En Lee, Lijun Bao, Sheng Po Chang, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

Original languageEnglish
Article number8200409
Pages (from-to)1-9
Number of pages9
JournalIEEE Photonics Journal
Volume16
Issue number3
DOIs
Publication statusPublished - 2024 Jun 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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