Fabrication of high-efficiency silicon solar cells by ion implant process

Chien Ming Lee, Sheng Po Chang, Shoou Jinn Chang, Ching In Wu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


This paper presents a novel method to produce high-efficiency silicon solar cells via an ion-implanted procedure. The proposed method simplifies the conventional thermal POCl3 diffusion process by eliminating two production stages: phosphosilicate glass (PSG) removal, and junction isolation. The PC-1D computer program was used in two-diode mode to simulate the performance of the implant process, and a cell tester with Berger flash system was used to measure I-V. Higher Voc was achieved because of good surface passivation, caused by the ion implanted and annealing processes. The proposed ion implanted method achieved 18.77% efficiency when applied to 156 × 156 mm p-type Cz wafers.

Original languageEnglish
Pages (from-to)7634-7645
Number of pages12
JournalInternational Journal of Electrochemical Science
Issue number6
Publication statusPublished - 2013 Jun

All Science Journal Classification (ASJC) codes

  • Electrochemistry


Dive into the research topics of 'Fabrication of high-efficiency silicon solar cells by ion implant process'. Together they form a unique fingerprint.

Cite this