This paper presents a novel method to produce high-efficiency silicon solar cells via an ion-implanted procedure. The proposed method simplifies the conventional thermal POCl3 diffusion process by eliminating two production stages: phosphosilicate glass (PSG) removal, and junction isolation. The PC-1D computer program was used in two-diode mode to simulate the performance of the implant process, and a cell tester with Berger flash system was used to measure I-V. Higher Voc was achieved because of good surface passivation, caused by the ion implanted and annealing processes. The proposed ion implanted method achieved 18.77% efficiency when applied to 156 × 156 mm p-type Cz wafers.
|Number of pages||12|
|Journal||International Journal of Electrochemical Science|
|Publication status||Published - 2013 Jun|
All Science Journal Classification (ASJC) codes