Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

Han Lee, Kundan Sivashanmugan, Chi Yuan Kao, Jiunn Der Liao

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young's modulus significantly increased with increasing Al ion dose.

Original languageEnglish
Article number031101
JournalJapanese Journal of Applied Physics
Volume56
Issue number3
DOIs
Publication statusPublished - 2017 Mar

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method'. Together they form a unique fingerprint.

Cite this