TY - JOUR
T1 - Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method
AU - Lee, Han
AU - Sivashanmugan, Kundan
AU - Kao, Chi Yuan
AU - Liao, Jiunn Der
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/3
Y1 - 2017/3
N2 - In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young's modulus significantly increased with increasing Al ion dose.
AB - In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young's modulus significantly increased with increasing Al ion dose.
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U2 - 10.7567/JJAP.56.031101
DO - 10.7567/JJAP.56.031101
M3 - Article
AN - SCOPUS:85014361290
SN - 0021-4922
VL - 56
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3
M1 - 031101
ER -