InGaAs(P)/InP double heterojunction bipolar transistors have been successfully fabricated by inserting an n-type InGaAsP (Eg=0.95 eV) quaternary (0.1 μm, undoped) layer on either side of the base by liquid-phase epitaxy (LPE). As we know, it is the first time to grow this structure by LPE. These devices have been fabricated using a non-self-aligned technology. In this case it can improve the common-emitter current/voltage (IC /V CE) characteristics. Small signal current gain hfe about 100 and dc current gain hFE about 80 at IC=38 mA can be obtained. The ideality factor of emitter-base junction is 1.43.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)