Fabrication of nanopillars comprised of InGaN/GaN multiple quantum wells by focused ion beam milling

Shang En Wu, Yu Wen Huang, Tao Hung Hsueh, Chuan-Pu Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The focused ion beam direct-written InGaN/GaN multiple-quantum-well nanopillars display strong cathodoluminescence emission blue-shifted by 35 meV compared with that of the as-grown wafer. With the removal of ion-irradiation-damage layers, the emission intensity even increased by a factor of 15. The ion beam induced nanopillar swelling was deliberately enhanced by tuning the beam condition, and the swollen volume can also be easily removed by wet-etching using KOH solution. The swelling behavior of an InGaN/GaN nanopillar under focused ion beam milling is found to play an important rule in reducing pillar size.

Original languageEnglish
Pages (from-to)4906-4908
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number6 PART 2
DOIs
Publication statusPublished - 2008 Jun 20

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication of nanopillars comprised of InGaN/GaN multiple quantum wells by focused ion beam milling'. Together they form a unique fingerprint.

Cite this