Fabrication of nanoscale PtOx/PZT/PtOx capacitors by e-beam lithography and plasma etching with photoresist mask

Chun Kai Huang; Yen Hua Chen; Yuan Chang Liang; Tai Bor Wu; Hsuen Li Chen; Wen Chi Chao

doi:10.1149/1.2162339

Fabrication of nanoscale PtO_x/PZT/PtO_x capacitors by e-beam lithography and plasma etching with photoresist mask

Chun Kai Huang, Yen Hua Chen, Yuan Chang Liang, Tai Bor Wu, Hsuen Li Chen, Wen Chi Chao

Department of Earth Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Nanoscaling of Pt Ox Pb (Zrx Ti1-x) O3 (PZT) Pt Ox capacitors in well-ordered arrays down to a cell size of 90×90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of Pt Ox and PZT layers was obtained with a rate of 165 nmmin in plasma of Ar Cl2 10% O2 and 240 nmmin in ArC F4 30% O2, respectively. The selectivity of Pt Ox to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of Pt Ox layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.

Original language	English
Pages (from-to)	C51-C53
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/1.2162339
Publication status	Published - 2006 Jan 27

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2162339

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title = "Fabrication of nanoscale PtOx/PZT/PtOx capacitors by e-beam lithography and plasma etching with photoresist mask",

abstract = "Nanoscaling of Pt Ox Pb (Zrx Ti1-x) O3 (PZT) Pt Ox capacitors in well-ordered arrays down to a cell size of 90×90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of Pt Ox and PZT layers was obtained with a rate of 165 nmmin in plasma of Ar Cl2 10% O2 and 240 nmmin in ArC F4 30% O2, respectively. The selectivity of Pt Ox to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of Pt Ox layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.",

author = "Huang, {Chun Kai} and Chen, {Yen Hua} and Liang, {Yuan Chang} and Wu, {Tai Bor} and Chen, {Hsuen Li} and Chao, {Wen Chi}",

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T1 - Fabrication of nanoscale PtOx/PZT/PtOx capacitors by e-beam lithography and plasma etching with photoresist mask

AU - Huang, Chun Kai

AU - Chen, Yen Hua

AU - Liang, Yuan Chang

AU - Wu, Tai Bor

AU - Chen, Hsuen Li

AU - Chao, Wen Chi

PY - 2006/1/27

Y1 - 2006/1/27

N2 - Nanoscaling of Pt Ox Pb (Zrx Ti1-x) O3 (PZT) Pt Ox capacitors in well-ordered arrays down to a cell size of 90×90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of Pt Ox and PZT layers was obtained with a rate of 165 nmmin in plasma of Ar Cl2 10% O2 and 240 nmmin in ArC F4 30% O2, respectively. The selectivity of Pt Ox to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of Pt Ox layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.

AB - Nanoscaling of Pt Ox Pb (Zrx Ti1-x) O3 (PZT) Pt Ox capacitors in well-ordered arrays down to a cell size of 90×90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of Pt Ox and PZT layers was obtained with a rate of 165 nmmin in plasma of Ar Cl2 10% O2 and 240 nmmin in ArC F4 30% O2, respectively. The selectivity of Pt Ox to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of Pt Ox layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.

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Fabrication of nanoscale PtO_x/PZT/PtO_x capacitors by e-beam lithography and plasma etching with photoresist mask

Abstract

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