Nanoscaling of Pt Ox Pb (Zrx Ti1-x) O3 (PZT) Pt Ox capacitors in well-ordered arrays down to a cell size of 90×90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of Pt Ox and PZT layers was obtained with a rate of 165 nmmin in plasma of Ar Cl2 10% O2 and 240 nmmin in ArC F4 30% O2, respectively. The selectivity of Pt Ox to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of Pt Ox layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering